ANALYZING PERFORMANCE METRICS OF LOW POWER 15T SRAM CELL USING FINFET AND GNRFET
Abstract & Details
Research Area
Electronics Engineering
Keywords
SRAM cell
FinFET
GNRFET
Power
Delay
Abstract
Today FinFET(finfield effect transistor), CNTFET(carbon nanotube field effect transistor),GNRFET(graphene nano ribbon field effect transistor ) are emerging devices and used as an alternative for planar MOSFETs for reducing leakage power and dealing with submicron issues in the field of electronics and information processing. Memory storage also became important aspect for various applications .SRAM (static random access memory)cell is used for memory storage and it is volatile memory.15T SRAM cell using CMOS is used for various applications but it has some problems like leakage current, short channel effects ,delay etc. To deal with these issues we use low power 15T SRAM cell using FinFET, CNTFET,GNRFET technologies. In this work we analyze the performance metrics like power , delay, area of 15T SRAM cell using FinFET, CNTFET, GNRFET technologies.
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Author Information
| # | Name | Institute / Affiliation |
|---|---|---|
| 1 | Dharma Teja Lanka | Dept. of ECE VNR Vignana Jyothi Institute of Engineering & Technology Hyderabad, India |
| 2 | S.Rajendra Prasad | Dept. of ECE VNR Vignana Jyothi Institute of Engineering & Technology Hyderabad, India |
| 3 | K.Srinivasa Rao | Dept. of ECE VNR Vignana Jyothi Institute of Engineering & Technology Hyderabad, India |
| 4 | P.Venkatesh | Dept. of ECE VNR Vignana Jyothi Institute of Engineering & Technology Hyderabad, India |
| 5 | B.Sushma | Dept. of ECE VNR Vignana Jyothi Institute of Engineering & Technology Hyderabad, India |
| 6 | H.Saritha | Dept. of ECE VNR Vignana Jyothi Institute of Engineering & Technology Hyderabad, India |
| 7 | B.Sai Nikhith | Dept. of ECE VNR Vignana Jyothi Institute of Engineering & Technology Hyderabad, India |
How to Cite
Use the following formats to cite this article in your research.
APA Style
Lanka, Dharma Teja, Prasad, S.Rajendra, Rao, K.Srinivasa, P.Venkatesh, B.Sushma, H.Saritha, & Nikhith, B.Sai (2022). ANALYZING PERFORMANCE METRICS OF LOW POWER 15T SRAM CELL USING FINFET AND GNRFET. International Journal of Advance Research and Innovative Ideas In Education, 8(4), 2491-2495.
MLA Style
Lanka, Dharma Teja, et al. "ANALYZING PERFORMANCE METRICS OF LOW POWER 15T SRAM CELL USING FINFET AND GNRFET." International Journal of Advance Research and Innovative Ideas In Education, vol. 8, no. 4, 2022, pp. 2491-2495.
IEEE Style
Dharma Teja Lanka, S.Rajendra Prasad, K.Srinivasa Rao, P.Venkatesh, B.Sushma, H.Saritha, and B.Sai Nikhith, "ANALYZING PERFORMANCE METRICS OF LOW POWER 15T SRAM CELL USING FINFET AND GNRFET," International Journal of Advance Research and Innovative Ideas In Education, vol. 8, no. 4, pp. 2491-2495, 2022.
Vancouver Style
Lanka Dharma Teja, Prasad S.Rajendra, Rao K.Srinivasa, P.Venkatesh, B.Sushma, H.Saritha, et al. ANALYZING PERFORMANCE METRICS OF LOW POWER 15T SRAM CELL USING FINFET AND GNRFET. International Journal of Advance Research and Innovative Ideas In Education. 2022;8(4):2491-2495.
Harvard Style
Lanka, Dharma Teja, Prasad, S.Rajendra, Rao, K.Srinivasa, P.Venkatesh, B.Sushma, H.Saritha, & Nikhith, B.Sai (2022) 'ANALYZING PERFORMANCE METRICS OF LOW POWER 15T SRAM CELL USING FINFET AND GNRFET', International Journal of Advance Research and Innovative Ideas In Education, 8(4), pp. 2491-2495.
Chicago Style
Lanka, Dharma Teja, et al. "ANALYZING PERFORMANCE METRICS OF LOW POWER 15T SRAM CELL USING FINFET AND GNRFET." International Journal of Advance Research and Innovative Ideas In Education 8, no. 4 (2022): 2491-2495.
Turabian Style
Lanka, Dharma Teja, et al. "ANALYZING PERFORMANCE METRICS OF LOW POWER 15T SRAM CELL USING FINFET AND GNRFET." International Journal of Advance Research and Innovative Ideas In Education 8, no. 4 (2022): 2491-2495.
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