Improving the performance of heterojunction silicon solar cells from the band diagram and surface passivation

Electronic Engineering

Research activities have made it possible to achieve high efficiency for heterojunction cells. Among the improvements that contribute to the higher efficiency. Passivation of the c-Si substrate surface by a thin intrinsic layer of a-Si:H is deposited between the a-Si:H layer and the c-Si substrate. This configuration is known as intrinsic thin film heterojunction (HIT) solar cells. Various research methodologies used to improve the efficiency of HIT cells have been developed over the years and HIT cells with efficiencies greater than 24% are currently being fabricated. A number of characterisations have been established to ensure development which are based on the evaluation of effective carrier lifetime, interface state density, recombination rate, cell efficiency, band gap, current density-voltage characteristics, charge carrier concentration, photoluminescence, activation energy, etc. But the quality of surface passivation plays a crucial role in the performance of heterojunction solar cells. This paper reports on the estimated improvements responsible for the development of these solar cells.

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