High Speed Low-Power Gate Level Synchronous Full Adder Designs

May 2025
Vol-11, Issue-3
Paper ID: 26621
ISSN: 2395-4396
Downloads: 0

Abstract & Details

Research Area
Electronics and Communication Engineering
Keywords
Full Adder Design Gate-Level Design Synchronous Circuits Low Power VLSI High Speed Adders XNM Architecture XAC Full Adder XNAIMC Design Transistor Optimization Power-Delay Product (PDP) Digital Circuit Design CMOS Logic Arithmetic Logic Unit (ALU) Tanner EDA Area Efficient Adder Multiplexer-Based Adder XNOR-Based Logic Signal Integrity Logic-Level Optimization VLSI Architecture
Abstract
In modern VLSI design, the full adder remains a fundamental component, directly influencing the overall efficiency of arithmetic circuits. This paper presents novel high-speed gate-level synchronous full adder designs that significantly optimize critical performance parameters including area, delay, and power consumption. Existing full adder implementations using AND-OR logic, half adders, and 2:1 multiplexers exhibit higher transistor counts (up to 74), increased delay (up to 20.03 ns), and elevated power dissipation (up to 137.5 µW). In contrast, the proposed designs—XAC, XNM, and XNAIMC—demonstrate remarkable improvements. The XNM design achieves the lowest delay of 0.032 ns and minimal power consumption of 0.335 µW with a reduced transistor count of 37. The XAC variant further reduces area to just 34 transistors, while maintaining efficient performance. These results confirm the effectiveness of the proposed architectures in advancing low-power, high-speed digital circuit design, making them highly suitable for next-generation VLSI systems.

Author Information

# Name Institute / Affiliation
1 sreenivasa R SJM Institute of Technology,Chitradurga
2 Dr.Siddesh K B SJM Institute of Technology,Chitradurga
3 Prof.Chetan S SJM Institute of Technology,Chitradurga
4 Vinay M S SJM Institute of Technology,Chitradurga
5 Gagan H R SJM Institute of Technology,Chitradurga
6 Manjunatha T SJM Institute of Technology,Chitradurga

How to Cite

Use the following formats to cite this article in your research.

APA Style
R, sreenivasa, B, Dr.Siddesh K, S, Prof.Chetan, S, Vinay M, R, Gagan H, & T, Manjunatha (2025). High Speed Low-Power Gate Level Synchronous Full Adder Designs. International Journal of Advance Research and Innovative Ideas In Education, 11(3), 1483-1489.
MLA Style
R, sreenivasa, et al. "High Speed Low-Power Gate Level Synchronous Full Adder Designs." International Journal of Advance Research and Innovative Ideas In Education, vol. 11, no. 3, 2025, pp. 1483-1489.
IEEE Style
sreenivasa R, Dr.Siddesh K B, Prof.Chetan S, Vinay M S, Gagan H R, and Manjunatha T, "High Speed Low-Power Gate Level Synchronous Full Adder Designs," International Journal of Advance Research and Innovative Ideas In Education, vol. 11, no. 3, pp. 1483-1489, 2025.
Vancouver Style
R sreenivasa, B Dr.Siddesh K, S Prof.Chetan, S Vinay M, R Gagan H, T Manjunatha. High Speed Low-Power Gate Level Synchronous Full Adder Designs. International Journal of Advance Research and Innovative Ideas In Education. 2025;11(3):1483-1489.
Harvard Style
R, sreenivasa, B, Dr.Siddesh K, S, Prof.Chetan, S, Vinay M, R, Gagan H, & T, Manjunatha (2025) 'High Speed Low-Power Gate Level Synchronous Full Adder Designs', International Journal of Advance Research and Innovative Ideas In Education, 11(3), pp. 1483-1489.
Chicago Style
R, sreenivasa, et al. "High Speed Low-Power Gate Level Synchronous Full Adder Designs." International Journal of Advance Research and Innovative Ideas In Education 11, no. 3 (2025): 1483-1489.
Turabian Style
R, sreenivasa, et al. "High Speed Low-Power Gate Level Synchronous Full Adder Designs." International Journal of Advance Research and Innovative Ideas In Education 11, no. 3 (2025): 1483-1489.

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