Design and analysis on the Performance of CNTFET Based Inverter in nanometer Regime

Bhavar S.R.; Khule R.S.

Design and analysis on the Performance of CNTFET Based Inverter in nanometer Regime

December 2017

Vol-3, Issue-6

Paper ID: 7205

ISSN: 2395-4396

Downloads: 0

Abstract & Details

Research Area

Electronics and telecommunication engineering

Keywords

Carbon nano-tube CNT CNTFETs temperature supply voltage oxide thickness.

Abstract

Abstract—In this paper we analyze PVT variation of CNTFET technology. In that we analyze performance of CNTFET inverter under the variation of temperature, supply voltage and oxide thickness. It’s been observed that the effect of change in temperature, supply voltage and oxide thickness has little effect on rise and fall time of the inverter. The leakage power consumption of the CNFET inverter is very small and validate this comparison has been carried out for 32nm and 22nm technology. The influence of variation of parameters on the characteristics of CNTFET inverter is simulated and analyzed using H-SPICE tool and Stanford nano model-39 of CNTFET.

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Author Information

#	Name	Institute / Affiliation
1	Bhavar S.R.	Matoshri Engineering college
2	Khule R.S.	Matoshri Engineering college

How to Cite

Use the following formats to cite this article in your research.

APA Style

S.R., Bhavar & R.S., Khule (2017). Design and analysis on the Performance of CNTFET Based Inverter in nanometer Regime. International Journal of Advance Research and Innovative Ideas In Education, 3(6), 1779-1784.

MLA Style

S.R., Bhavar, and Khule R.S.. "Design and analysis on the Performance of CNTFET Based Inverter in nanometer Regime." International Journal of Advance Research and Innovative Ideas In Education, vol. 3, no. 6, 2017, pp. 1779-1784.

IEEE Style

Bhavar S.R. and Khule R.S., "Design and analysis on the Performance of CNTFET Based Inverter in nanometer Regime," International Journal of Advance Research and Innovative Ideas In Education, vol. 3, no. 6, pp. 1779-1784, 2017.

Vancouver Style

S.R. Bhavar, R.S. Khule. Design and analysis on the Performance of CNTFET Based Inverter in nanometer Regime. International Journal of Advance Research and Innovative Ideas In Education. 2017;3(6):1779-1784.

Harvard Style

S.R., Bhavar & R.S., Khule (2017) 'Design and analysis on the Performance of CNTFET Based Inverter in nanometer Regime', International Journal of Advance Research and Innovative Ideas In Education, 3(6), pp. 1779-1784.

Chicago Style

S.R., Bhavar and Khule R.S.. "Design and analysis on the Performance of CNTFET Based Inverter in nanometer Regime." International Journal of Advance Research and Innovative Ideas In Education 3, no. 6 (2017): 1779-1784.

Turabian Style

S.R., Bhavar and Khule R.S.. "Design and analysis on the Performance of CNTFET Based Inverter in nanometer Regime." International Journal of Advance Research and Innovative Ideas In Education 3, no. 6 (2017): 1779-1784.