Design and Implementation of Nano Ribbon Interconnects

Electronics and Communication Engineering

Over the past few years, the development of on-chip interconnects has been considered one of the most challenging areas in VLSI circuit integration. As interconnects are scaled down, the effects of parasitic capacitance become significant. Additionally, the resistivity of Cu-based interconnects increases due to the influence of sidewall surfaces and grain-boundary scattering. Furthermore, the low current bearing capability of interconnects in nano-scale dimension circuits, coupled with increased thermal energy, makes them unreliable for future advanced nano-scale technology. These issues have made it increasingly difficult to identify the right interconnect materials that can provide the necessary reliability and resistivity. Graphene nanoribbons have emerged as a promising candidate for next-generation interconnects due to their amazing transport and electrical properties. They have the least resistivity in nature with a high current density, long mean free path, and large electron mobility. However, the electrical and transport properties of GNR can be affected by changes in their device structure. To address this issue, our project aims to discuss the electrical and transport properties of various models of nanoribbon in a detailed manner. We will also incorporate a circuit modelling of the resistive-capacitive distributed network for nanoribbon interconnects and calculate the corresponding interconnect RC delay. The project will involve calculating the schematic view of the unit cell of different models, binding energy of ZGNR and AGNR, and band structure of ZGNR and AGNR using Quantum ATK. Wide-width nanoribbons are the most suitable candidates for the interconnect model. This project will provide insights into the potential use of graphene nanoribbons as a reliable interconnect material for future advanced nano-scale technology.

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