AN ELECTRON REMINISCENCE DEVICE - MEMOBRAIN

ELECTRONICS AND COMMUNICATION ENGINEERING

This paper puts forth the author’s implementation of a device which will be able to make the brain remember the past, hidden and lost memories which were actually not destroyed. The device Memobrain has the capacity to energize the brain cells which got overlapped due to millions of newer cells. This device provides a type of electrical synapses in the form of electroconvulsive shock to the Grey matter (Hippocampus) of the brain which will be able to bring backs those hidden and covered memories along with the present ones. The working principle of this device will be very similar to the electron energy band gap from valence band to conduction band on receiving external energy. As the brain does not have the capacity to lose the data it perceived, it stores its data and information in some part of the memory region which is normally known to be as hippocampus. The device will be a type of Helmet worn on the head simply as a normal bike helmet but with sensors fitted in it for signals.

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