Nano Structure of Silicon Nitride in Nano- electronic

Ahad Khan Pyawarai

Nano Structure of Silicon Nitride in Nano- electronic

October 2020

Vol-6, Issue-5

Paper ID: 12841

ISSN: 2395-4396

Downloads: 0

Abstract & Details

Research Area

Physics

Keywords

CMIS CMOS Nnitride Silicon

Abstract

The shrinking of the gate dielectric is so fast in that ultra-thin oxide cannot be used as a good dielectric in the future of CMOS generation .We analyzed and convoluted the synchrotron spectra with FitXPS. We found an amorphous interface between Nitride Silicon film and Silicon substrate. The results show that Nnitride Silicon can be as a good gate dielectric of CMIS

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Author Information

#	Name	Institute / Affiliation
1	Ahad Khan Pyawarai	Physics Department, Electromechancs Faculty, Kabul, Afghanistan

How to Cite

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APA Style

Pyawarai, Ahad Khan (2020). Nano Structure of Silicon Nitride in Nano- electronic. International Journal of Advance Research and Innovative Ideas In Education, 6(5), 1269-1272.

MLA Style

Pyawarai, Ahad Khan. "Nano Structure of Silicon Nitride in Nano- electronic." International Journal of Advance Research and Innovative Ideas In Education, vol. 6, no. 5, 2020, pp. 1269-1272.

IEEE Style

Ahad Khan Pyawarai, "Nano Structure of Silicon Nitride in Nano- electronic," International Journal of Advance Research and Innovative Ideas In Education, vol. 6, no. 5, pp. 1269-1272, 2020.

Vancouver Style

Pyawarai Ahad Khan. Nano Structure of Silicon Nitride in Nano- electronic. International Journal of Advance Research and Innovative Ideas In Education. 2020;6(5):1269-1272.

Harvard Style

Pyawarai, Ahad Khan (2020) 'Nano Structure of Silicon Nitride in Nano- electronic', International Journal of Advance Research and Innovative Ideas In Education, 6(5), pp. 1269-1272.

Chicago Style

Pyawarai, Ahad Khan. "Nano Structure of Silicon Nitride in Nano- electronic." International Journal of Advance Research and Innovative Ideas In Education 6, no. 5 (2020): 1269-1272.

Turabian Style

Pyawarai, Ahad Khan. "Nano Structure of Silicon Nitride in Nano- electronic." International Journal of Advance Research and Innovative Ideas In Education 6, no. 5 (2020): 1269-1272.