SYNTHESIS AND CHARACTERIZATION OF CuWS2 SPRAY PYROLYSIS IN THIN FILMS

THIN FILM TECHNOLOGY

Copper doped Tungsten disulphide (CuWS2) thin films have been synthesized on to glass substrates at 400°C temperatures by spray pyrolysis technique from aqueous solution using cupric acetate Cu (CH3COO)2.H2O as a precursor. The structure of the deposited CuWS2 thin films characterized by X-ray diffraction, the surface morphology was observed by a scanning electron microscope,the optical transmission and absorption spectra was recorded by ultraviolet visible spectroscopy was studied. All the CuWS2 thin films, irrespective of growth temperature, showed a monoclinic structure with the main CuO (111) orientation, and the crystallite size was about 8.9954 Å for the thin film synthesized at 300°C. The optical transmission of the as deposited film is found to decrease with the increase of substrate temperature, the optical band gap of the thin films varies from 1.60 to 2.43 eV and the electrical resistivity varies from 5 to 8 Ohm-cm for the films grown at the substrate temperatures.

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