SHUNT RESISTANCE IN ORGANIC BULK-HETEROJUNCTION SOLAR CELL

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National Seminar On "Adroitness in e-Content Development for Higher Education"

Shunt resistance is one of the key parameters affecting the performance of organic photovoltaic solar cells. Ideally it should be infinite. It is primarily due to defects that provide a forward leakage path of minority carriers. Grain boundaries are also responsible for the same in particularly polycrystalline solar cells. Several electronic mechanisms arising from different structures within the solar cell can contribute to decreasing it. It indirectly reflects the leakage properties of semiconductor – polymer solar cell structure. i.e. it gives an idea about the losses of charge carriers during the charge transport mechanism across the semiconductor-polymer interface. It implies that the loss mechanisms like the absorption of charge carriers exists at the interface, which leads to a poor charge transport across the interface. The efforts have been made to characterized polymer/semiconductor solar cells. Therefore it was observed that MoSe2/polypyrrole solar cell having photovoltaic behavior. Usually Rsh (shunt resistance) is estimated from the current–voltage (I→V) curves at V=0 using slope method. It has been observed that shunt resistances at different intensities to be ranging from 25 kΩ to 50 kΩ, which not good as expected. This might be one of the reasons for lower conversion efficiency of MoSe2 based polymer solar cell.

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